Diffusion coefficients predicting facet-dependent crystallization in amorphous silicon nitride (Journal Article) (2025)

Journal Article · · Physical Review B

Janicki, Tesia Danielle[1]; Gibson, Jason[2]; Chacon, Carlos Manuel[1]; Chiu, Edwin[1]; Grutzik, Scott Joseph[1]; Hattar, Khalid[3]; Hennig, Richard[2]; Kotula, Paul G.[1]; Lim, Hojun[1]; Parkin, Calvin[1]; Podlevsky, Jennie[1]; Rezwan, Aashique Alam[1]; Bishop, Christopher[1]; Lane, James Matthew Doyle[1]

  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
  2. University of Florida
  3. University of Tennessee, Knoxville

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Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
National Nuclear Security Administration
Grant/Contract Number:
NA0003525
OSTI ID:
2566660
Report Number(s):
SAND2025-05885J
Journal Information:
Physical Review B, Vol. 111, Issue 2
Country of Publication:
United States
Language:
English

References (52)

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Nitrogen Diffusion in Amorphous Silicon Nitride Isotope Multilayers Probed by Neutron Reflectometry journal February 2006
Influence of string-like cooperative atomic motion on surface diffusion in the (110) interfacial region of crystalline Ni journal February 2015

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